ohmic resistance

英

美

欧姆律电阻

计算机

英英释义

noun

• a material's opposition to the flow of electric current
  Synonym:electric resistanceelectrical resistanceimpedanceresistanceresistivity

双语例句

• The back ohmic contact resistance of Al-BSF by DC magnetron sputtering is downtrend with the annealing temperature increasing, and less than that by the screen printing process.
  溅射工艺制备出的铝背场接触电阻随退火温度升高呈下降趋势且溅射工艺的接触电阻比印刷工艺更小。
• Furthermore, the cyclic reversibility of the electrode reaction improves after doping La and the rare earth La has good effect in inhibiting the oxygen evolution reaction of sample electrode, reducing the electrode reaction of the electrochemical polarization and ohmic resistance, and increasing the discharge voltage.
  同时，发现稀土元素物质La掺杂可以明显改善电极反应的充放电循环可逆性，并有效抑制镍电极上的析氧反应和降低电极反应的电化学极化和欧姆阻抗，提高其放电电压。
• Reduce Ohmic Contact Resistance to p-GaN Using InGaN/ AlGaN Superlattice
  用InGaN/AlGaN超晶格降低p-GaN欧姆接触电阻
• The back ohmic contact of the aluminum back surface field ( Al-BSF) of crystalline silicon solar cells greatly impacts the output properties of solar cells. And so it is imperative to improve the back ohmic contact property by novel technology in order to reduce the series resistance.
  单晶硅太阳电池铝背场的欧姆接触影响其输出特性，采用新的工艺技术降低电池的串联电阻势在必行。
• Therefore, how to obtain ohmic contact on p-GaN with low contact resistance and high transmittance, which has became a hot research topic of researcher.
  因此，如何在p-GaN上获得低阻和高透光率的欧姆接触，从而提高LED发光效率，一直是众多研究者关注的焦点问题之一。
• Study on Increase in the Ohmic Resistance of a Conducting Plate with a Sharply Changing Width
  窄式陡变宽度导板电阻增量研究
• The voltage drop occurring at the beginning of discharging for VRLA batteries is mainly caused by ohmic internal resistance of the batteries.
  阀控式密封铅蓄电池（VRLA）电流放电初期出现的电压降主要是由电池欧姆内阻引起的。
• The ohmic base resistance of bipolar transistor introduced in EM_2 Model is a very important parameter.
  在双极型晶体管EM2模型参数中引入的基极电阻r'b是重要的也是较难测量的参数之一。
• By lots of testing and analyses time after time, Ohmic contact is formed Between Au and ZnO and the related resistance is about 27 Ω.
  对ZnO六棱微米管的性能进行初步探索，经过大量、反复的分析测试，证实了Au/ZnO形成的金属与半导体的接触是欧姆接触，且电阻较小，约为27Ω；
• Howevers, there are significant barriers to intermediate temperature SOFC: electrolyte ohmic resistance and electrode overpotential, especially cathode overpotential.
  但随着工作温度的降低，电解质欧姆电阻和电极极化电阻增大，而阴极的极化电阻增大尤为明显。